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| VMB100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VMB100-12 is Designed for PACKAGE STYLE .500 6L FLG C A 2x ON FULL R D FEATURES: * * * OmnigoldTM Metalization System B G .725/18,42 F E K H M L MAXIMUM RATINGS DIM J I MINIMUM inches / mm MAXIMUM inches / mm IC VCBO VCEO VEBO PDISS TJ TSTG JC 20 A 36 V 18 V 4.0 V 270 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 0.65 OC/W A B C D E F G H I J K L M N .150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 .725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .120 / 3.05 .135 / 3.43 ORDER CODE: ASI10747 O CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICES hFE COB PG C IC = 50 mA TC = 25 C NONETEST CONDITIONS IC = 100 mA IC = 100 mA IE = 10 mA VCE = 15 V VCE = 5.0 V VCB = 12.5 V MHz VCE = 12.5 V POUT = 100 W IC = 5.0 A f = 1.0 MINIMUM TYPICAL MAXIMUM 36 36 18 4.0 15 20 --400 10 60 UNITS V V V V mA --pF f = 88 MHz dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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